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Freescale Semiconductor Technical Data
Document Number: MRF18060A Rev. 11, 10/2008
N - Channel Enhancement - Mode Lateral MOSFET
Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical GSM Performance @ 1805 MHz Power Gain -- 13 dB @ 60 Watts Efficiency -- 45% @ 60 Watts * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power Features * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF18060ALR3
1805 - 1880 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET
CASE 465 - 06, STYLE 1 NI - 780
Table 1. Maximum Ratings
Rating Symbol VDSS VGS PD Tstg TC TJ Value - 0.5, +65 - 0.5, +15 180 1.03 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 0.97 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF18060ALR3 1
RF Device Data Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
RF Power Field Effect Transistor
LIFETIME BUY
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) 2 2.5 -- -- 3.9 0.27 4 4.5 -- Vdc Vdc Vdc V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 6 1 Vdc Adc Adc Symbol Min Typ Max Unit
Dynamic Characteristics Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (1) (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Common - Source Amplifier Power Gain @ 60 W (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz) Drain Efficiency @ 60 W (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 MHz) 1. Part is internally matched both on input and output. Ciss Coss Crss -- -- -- 160 740 2.7 -- -- -- pF pF pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) Gps IRL 11.5 43 -- 13 45 -- -- -- - 10 dB % dB
MRF18060ALR3 2 RF Device Data Freescale Semiconductor
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R2
R1
T1 R3
Z6 VSUPPLY C4 + C3
VBIAS C1
R4 C2 R5 Z4 Z5 C7 Z7
RF OUTPUT
RF INPUT
Z1 C5
Z2 C6
Z3 DUT
C1 C2, C4, C7 C3 C5 C6 R1, R3 R2, R4 R5 T1
100 nF Chip Capacitor (1203) 10 pF Chip Capacitors 10 mF, 35 V Electrolytic Capacitor 1.2 pF Chip Capacitor 1.0 pF Chip Capacitor 2.2 k Chip Resistors (0805) 2.7 k Chip Resistors (0805) 1.1 k Chip Resistor (0805) BC847 Transistor SOT - 23
Z1 Z2 Z3 Z4 Z5 Z6 Z7
0.47 x 0.09 1.16 x 0.09 0.57 x 0.95 0.59 x 1.18 1.26 x 0.15 1.15 x 0.09 0.37 x 0.09
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Figure 1. 1805 - 1880 MHz Test Fixture Schematic
VBIAS R2 R1 T1 R3
C1 R4 C2 R5
C3 C4
VSUPPLY
C7 C6 C5
Ground MRF18060
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 1805 - 1880 MHz Test Fixture Component Layout
MRF18060ALR3 RF Device Data Freescale Semiconductor 3
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
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VBIAS C1
T1
R1 R2
R5 VSUPPLY C2 C4 +
R3 T2 R4 R6 RF INPUT C3
C5
Z1 C6
Z2 C7
Z3
Z6 Z4 Z5 C8
Z7
RF OUTPUT
C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5
1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU - P (0805) 10 mF, 35 V Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU - P (0805) 1 pF Chip Capacitor, ACCU - P (0805) 10 Chip Resistor (0805) 1 k Chip Resistors (0805) 1.2 k Chip Resistor (0805) 2.2 k Chip Resistor (0805) 5 k, SMD Potentiometer
T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.159 x 0.055 Microstrip Z2 0.982 x 0.055 Microstrip Z3 0.087 x 0.055 Microstrip Z4 0.512 x 0.787 Microstrip Z5 0.433 x 1.220 Microstrip Z6 1.039 x 0.118 Microstrip Z7 0.268 x 0.055 Microstrip Substrate = 0.5 mm Teflon(R) Glass, r = 2.55
Figure 3. 1800 - 2000 MHz Demo Board Schematic
MRF18060ALR3 4 RF Device Data Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
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III III III
VBIAS
Ground
VSUPPLY
R1 R2 R3 R4
C4 T1
C7
C8
C6
LIFETIME BUY
MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. 1800 - 2000 MHz Demo Board Component Layout
RF Device Data Freescale Semiconductor
I III III I I III III II II II
I II II II II II I
T2 R5
C1
C2 C3
R6 MRF18060
C5
MRF18060ALR3 5
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
II III I III I III II III I II
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
16 Pout , OUTPUT POWER (WATTS) 15 G ps, POWER GAIN (dB) 14 13 500 mA 12 11 300 mA 10 9 8 1 10 Pout, OUTPUT POWER (WATTS) 100 100 mA VDD = 26 Vdc f = 1880 MHz IDQ = 750 mA 100
80 70 60 50 40 30 20 10 0 18 20
Pin = 5 W
2.5 W
1W VDD = 26 Vdc IDQ = 500 mA 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) 28 30
LIFETIME BUY
Figure 5. Power Gain versus Output Power
Figure 6. Output Power versus Supply Voltage
90 80 70 3W 60 50 40 30 20 10 0 1800 1820 1840 1860 f, FREQUENCY (MHz) 1880 1900 1W 0.5 W VDD = 26 Vdc IDQ = 500 mA Pin = 6 W Pout , OUTPUT POWER (WATTS)
90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 Pin, INPUT POWER (WATTS) 5 6 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz h Pout
60 55 50 45 40 35 30 25 20 15
Figure 7. Output Power versus Frequency
Figure 8. Output Power and Efficiency versus Input Power
0 -2 Gps -4 -6 -8 -10 -12 -14 IRL VDD = 26 Vdc IDQ = 500 mA 2000 2100 -16 -18 -20 IRL, INPUT RETURN LOSS (dB)
15.0 14.5 14.0 G ps, POWER GAIN (dB) 13.5 13.0 12.5 12.0 11.5 11.0 10.5 10.0 1700 1800 1900 f, FREQUENCY (MHz)
Figure 9. Wideband Gain and IRL (at Small Signal)
MRF18060ALR3 6 RF Device Data Freescale Semiconductor
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
90
Pout , OUTPUT POWER (WATTS)
, DRAIN EFFICIENCY (%)
Zo = 5
Zload
f = 1700 MHz
f = 2100 MHz
f = 1700 MHz
Zsource
f = 2100 MHz
VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz 1700 1800 1900 2000 2100 Zsource 0.60 - j2.53 0.80 - j3.20 0.92 - j3.42 1.07 - j3.59 1.31 - j4.00 Zload 2.27 - j3.44 2.05 - j3.05 1.90 - j2.90 1.64 - j2.88 1.29 - j2.99
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF18060ALR3 RF Device Data Freescale Semiconductor 7
LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09
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PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M
3 (FLANGE)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465 - 06 ISSUE G NI - 780 MRF18060ALR3
MRF18060ALR3 8 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 11 Date Oct. 2008 Description * Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. * Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 * Added Product Documentation and Revision History, p. 9
MRF18060ALR3 RF Device Data Freescale Semiconductor 9
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MRF18060ALR3
Rev. 10 11, 10/2008 Document Number: MRF18060A
RF Device Data Freescale Semiconductor

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